D1471 데이터 시트보기 (PDF) - Renesas Electronics

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D1471

Silicon NPN Planar, Darlington

Renesas Electronics 

2SD1471

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCBO

VCEO

VEBO

IC

i *1

C(peak)

PC * 2

Tj

40

30

10

300

500

1

150

Storage temperature

Tstg

–55 to +150

Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)

Unit

V

V

V

mA

mA

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 40

—

voltage

Collector to emitter breakdown V(BR)CEO 30

—

voltage

Emitter to base breakdown

V(BR)EBO

10

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

hFE1*1

hFE2*1

hFE3*1

VCE(sat)

—

—

—

—

2000 —

3000 —

3000 —

—

—

Base to emitter saturation

VBE(sat)

—

—

voltage

Notes: 1. The 2SD1471 is grouped by hFE as follows.

2. Pulse test

Mark

DT

ET

hFE1

2000 to 100000 5000 to 100000

hFE2

3000 min

10000 min

hFE3

3000 min

10000 min

Max Unit

—

V

—

V

—

V

1

µA

10

µA

100000

—

—

1.5 V

2.0 V

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 30 V, IE = 0

VCE = 24 V, RBE = ∞

VCE = 5 V, IC = 10 mA*2

VCE = 5 V, IC = 100 mA*2

VCE = 5 V, IC = 400 mA*2

IC = 100 mA, IB = 0.1 mA*2

IC = 100 mA, IB = 0.1 mA*2

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