MBR0520L
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
junction to lead
Typical thermal resistance
junction to ambient
Operating junction and storage
temperature
Test condition
VISHAY
Symbol
RthJL
RthJA
Tj, Tstg
Value
118
206
- 55 to + 125
Unit
°C/W
°C/W
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum instantaneous
forward voltage1)
IF = 0.1 A, Tj = 25 °C
IF = 0.1 A, Tj = 100 °C
IF = 0.5 A, Tj = 25 °C
IF = 0.5 A, Tj = 100 °C
Maximum DC reverse current VR = 10 V, Tj = 25 °C
VR = 10 V, Tj = 100 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 100 °C
1) Pulse test: 300 ms pulse width, 1 % duty cycle
Symbol
Min
VF
VF
VF
VF
IR
IR
IR
IR
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Typ.
Max
Unit
0.300
V
0.220
V
0.385
V
0.330
V
75
µA
5
mA
250
µA
8
mA
0.8
Resistive or
Inductive Load
0.6
0.4
0.2
0
50 60 70 80 90 100 110 120 130 140 150
17908
Case Temperature ( ° C )
Fig. 1 Derating Curve Output Rectified Current
6
5
4
3
2
1
0
1
17909
8.3 Single Half Sine-Wave
(JEDEC Method) at rated TL
10
100
Number of Cycles at 60 Hz
Fig. 2 Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 85675
Rev. 1.2, 22-Apr-04