2SK1358 데이터 시트보기 (PDF) - Toshiba

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2SK1358

Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5)

Toshiba 

2SK1358

Electrical Characteristics (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

Gate Leakage Current

Drain Cut-off Current

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source ON Resistance

Forward Transfer Admittance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Rise Time

Switching

Time

Turn-on Time

Fall Time

Turn-off Time

IGSS

IDSS

V(BR) DSS

Vth

RDS (ON)

Yfs

Ciss

Crss

Coss

tr

ton

tf

toff

VGS = ±25V, VDS = 0V

VDS = 720V, VGS = 0V

ID = 10mA, VGS = 0V

VDS = 10V, ID = 1mA

ID = 4A, VGS = 10V

VDS = 20V, ID = 4A

VDS = 25V, VGS = 0V,

f = 1MHz

MIN. TYP. MAX. UNIT

–

– ±100 nA

–

–

300

µA

900

–

–

V

1.5

–

3.5

V

–

1.1 1.4

Ω

2.0 4.0

–

S

– 1300 1800

pF

–

100 150

–

180 260

–

25

50

–

40

80

–

20

40

ns

–

100 200

Total Gate Charge

(Gate-Source Plus Gate-Drain)

Gate-Source Charge

Gate-Drain (“Miller”) Charge

Qg

VDD = 400V, VGS = 10V,

Qgs

ID = 9A

Qgd

Source-Drain Diode Ratings and Characteristics (Ta = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITION

Continuous Drain Reverse Current

Pulse Drain Reverse Current

Diode Forward Voltage

IDR

–

IDRP

–

VDSF

IDR = 9A, VGS = 0V

–

120 240

nC

–

70

–

–

50

–

MIN. TYP. MAX. UNIT

–

–

9

A

–

–

27

A

–

–

-2.0

V

2/6

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