1N5817W 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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1N5817W Datasheet PDF : 3 Pages
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Typical Characteristics
Forward Characteristics
3
Pulesd
1
=100℃
Ta
=25℃
Ta
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE V (V)
F
Reverse Characteristics
10
Pulesd
T =100℃
a
1
0.1
0.01
T =25℃
a
1E-3
0
10
20
30
40
REVERSE VOLTAGE V (V)
R
Capacitance Characteristics
200
T =25℃
a
f=1MHz
160
120
80
40
0
0
4
8
12
16
20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
600
500
400
300
200
100
0
0
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
High Diode Semiconductor
2
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