MMBT5551_18 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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MMBT5551_18

SMD General Purpose NPN Transistors

Diotec Semiconductor Germany  

MMBT5551

Characteristics

Tj = 25°C

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspannung 1)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1)

VCEsat

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VBEsat

VCB = 120 V E open

E open, Tj = 100°C

ICBO

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 4 V

C open

IEBO

Gain-Bandwidth Product – Transitfrequenz

IC = 10 mA, VCE = 10 V, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – Umgebung

RthA

Min.

–

Kennwerte

Typ.

Max.

–

0.15 V

0.20 V

–

–

1.0 V

–

–

50 nA

50 µA

–

–

50 nA

100 MHz

–

300 MHz

–

–

6 pF

–

–

30 pF

< 420 K/W 2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG

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