MJD340T4(1997) 데이터 시트보기 (PDF) - STMicroelectronics

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MJD340T4
(Rev.:1997)

COMPLEMENTARY SILICON POWER TRANSISTORS

STMicroelectronics 

MJD340

MJD350

COMPLEMENTARY SILICON POWER TRANSISTORS

s SGS-THOMSON PREFERRED SALESTYPES

s COMPLEMENTARY PNP - NPN DEVICES

s MEDIUM VOLTAGE CAPABILITY

s SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s ELECTRICAL SIMILAR TO MJE340 AND

MJE350

APPLICATIONS

s SOLENOID/RELAY DRIVERS

s GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD340 and MJD350 form complementary

NPN - PNP pairs.

They are manufactured using Medium Voltage

Epitaxial Planar technology, resulting in a rugged

high performance cost-effective transistor.

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCBO Collector-Base Voltage (I E = 0)

VCEO Collector-Emitter Voltage (IB = 0)

VEBO Emitt er-Base Voltage (IC = 0)

IC

Collector Current

ICM Collector Peak Current (tp = 25 oC)

Ptot Tot al Power Dissipation at Tcase ≤ 25 oC

Tstg Storage T emperature

Tj

Max Operating Junction Temperature

For PNP types voltage and current values are negative.

June 1997

NPN

PNP

V alu e

MJD340

MJD350

300

300

3

0.5

0.75

15

-65 to 150

150

Un it

V

V

V

A

A

W

oC

oC

1/5

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