STW26NM60N_13 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

일치하는 목록

STW26NM60N_13

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in a TO-247 package

STMicroelectronics 

STW26NM60N

Electrical characteristics

Symbol

Table 7. Switching times

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 10 A

RG = 4.7 Ω VGS = 10 V

(see Figure 14)

Min. Typ. Max. Unit

- 13 - ns

- 25 - ns

- 85 - ns

- 50 - ns

Symbol

Table 8. Source drain diode

Parameter

Test conditions

Min. Typ. Max Unit

ISD Source-drain current

-

20 A

(1)

ISDM Source-drain current (pulsed)

-

80 A

(2)

VSD

Forward on voltage

ISD = 20 A, VGS = 0

-

1.5 V

trr Reverse recovery time

- 370

ISD = 20 A, di/dt = 100 A/μs

ns

Qrr

IRRM

Reverse recovery charge

Reverse recovery current

VDD = 60 V

(see Figure 16)

- 5.8

μC

- 31.6

A

trr Reverse recovery time

- 450

ISD = 20 A, di/dt = 100 A/μs

ns

Qrr Reverse recovery charge

VDD = 60 V, Tj = 150 °C

- 7.5

μC

IRRM Reverse recovery current

(see Figure 16)

- 32.5

A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

DocID025246 Rev 1

5/13

13

Share Link: