SR150 데이터 시트보기 (PDF) - Diode Semiconductor Korea
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SR150 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
SR120 --- SR1A0
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 20 --- 100 V
CURRENT: 1.0A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
SR120 SR130 SR140 SR150 SR160 SR180 SR1A0 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
(see fig.1)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 1.0A(Note 1)
VRRM 20
30
40
50
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
IF(AV)
1.0
IFSM
40.0
VF
0.55
0.7
80
100
V
56
70
V
80
100
V
A
A
0.85
V
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
Typical junction capacitance (Note2)
CJ
Typical thermal resistance (Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
- 55 ---- + 125
0.5
mA
10.0
110
pF
50
／Ｗ
- 55 ---- + 150
- 55 ---- +150
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