BUK202-50Y 데이터 시트보기 (PDF) - Philips Electronics
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BUK202-50Y Datasheet PDF : 13 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
VBG
VSG
VIG
VBL
IB
II
B
I
TOPFET
IL
IS
HSS L
S
G
VLG
RS
IG
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.5. Normalised limiting power dissipation.
PD% = 100⋅PD/PD(25 ˚C) = f(Tmb)
IL / A
BUK202-50Y
20
10
0
0
20
40
60
80 100 120 140
Tmb / C
Fig.6. Limiting continuous on-state load current.
IL = f(Tmb); conditions: VIG = 5 V, VBG = 13 V
Product specification
BUK202-50Y
IL / A
40
BUK202-50Y
35
VBG / V = 13
30
7
25
6
20
5
15
10
5
0
0
0.2
0.4
0.6
0.8
1
VBL / V
Fig.7. Typical on-state characteristics, Tj = 25 ˚C.
IL = f(VBL); parameter VBG; tp = 250 µs
RON / mOhm
50
BUK202-50Y
40
30
20
10
0
1
10
100
VBG / V
Fig.8. Typical on-state resistance, Tj = 25 ˚C.
RON = f(VBG); conditions: IL = 10 A; tp = 300 µs
RON / mOhm
80
BUK202-50Y
70
VBG =
60
5V
50
13 V
40
30
typ.
20
10
0
-60
-20
20
60
100
140
180
Tj / C
Fig.9. Typical on-state resistance, tp = 300 µs.
RON = f(Tj); parameter VBG; condition IL = 2 A
April 1995
6
Rev 1.100
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