TK20E60U 데이터 시트보기 (PDF) - Toshiba

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TK20E60U

MOSFETs Silicon N-Channel MOS (DTMOS II)

Toshiba 

MOSFETs Silicon N-Channel MOS (DTMOS)

TK20E60U

1. Applications

• Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.)

(2) High forward transfer admittance: |Yfs| = 12 S (typ.)

(3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)

(4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

TK20E60U

TO-220

1: Gate (G)

2: Drain (D)(Heatsink)

3: Source (S)

1

2012-02-06

Rev.1.0

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