IR2131_ 데이터 시트보기 (PDF) - International Rectifier
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IR2131_ Datasheet PDF : 8 Pages
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IR2131
Device Information
Process & Design Rule
Transistor Count
Die Size
Die Outline
Index
Next Data Sheet
HVDCMOS 4.0 µm
700
167 X 141 X 26 (mil)
Thickness of Gate Oxide
Connections
First
Layer
Second
Layer
Contact Hole Dimension
Insulation Layer
Passivation
Method of Saw
Method of Die Bond
Wire Bond
Leadframe
Package
Remarks:
Material
Width
Spacing
Thickness
Material
Width
Spacing
Thickness
Material
Thickness
Material
Thickness
Method
Material
Material
Die Area
Lead Plating
Types
Materials
800Å
Poly Silicon
4 µm
6 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
6 µm
9 µm
20,000Å
8 µm X 8 µm
PSG (SiO2)
1.5 µm
PSG (SiO2)
1.5 µm
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Ag
Pb : Sn (37 : 63)
28 Lead PDIP & SOIC / 44 Lead PLCC
EME6300 / MP150 / MP190
B-162 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
To Order
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