C2908 데이터 시트보기 (PDF) - Inchange Semiconductor
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C2908 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2908
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A ;IB1=0.3A;L=1.0mH
VCEsat Collector-emitter saturation voltage IC=3A ;IB=300mA
VBEsat Base-emitter saturation voltage
IC=3A ;IB=300mA
ICBO
Collector cut-off current
VCB=100V; IE=0
ICEX
Collector cut-off current
VCE=100V;VBE=-1.5V
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
Switching times
VEB=5V; IC=0
IC=0.3A ; VCE=5V
IC=3A ; VCE=5V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; VCC=30V
IB1=0.3A ,IB2=-0.3A
RL=10Ω
MIN TYP. MAX UNIT
100
V
1.0
V
1.5
V
10
μA
10
μA
10
μA
60
320
40
0.5
μs
2.0
μs
1.0
μs
hFE-1 Classifications
M
L
60-120
100-200
K
160-320
2
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