2SA1469 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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2SA1469

Silicon PNP transistor in a TO-220F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA1469

Rev.F Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

PC(Tc=25℃)

Tj

Tstg

DATA SHEET

数值

Rating

-80

-60

-5.0

-5.0

-7.0

2.0

20

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Base Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-1.0mA IE=0

VCEO IC=-1.0mA IB=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-80

V

-60

V

Emitter to Base Breakdown Voltage VEBO IE=-1.0mA IC=0

-5.0

V

Collector Cut-Off Current

ICBO VCB=-40V IE=0

-0.1 mA

Emitter Cut-Off Current

IEBO VEB=-4.0V IC=0

-0.1 mA

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE VCE=-2.0V IC=-1.0A

70

VCE(sat) IC=-2.5A

IB=-0.125A

280

-0.4 V

Transition Frequency

fT VCE=-5.0V IC=-1.0A

100

MHz

Turn-On Time

ton

0.1

Storage Time

tstg 20IB1=-20IB2=IC=2A

0.5

μs

Fall Time

tf

0.1

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