STP80PF55_02 데이터 시트보기 (PDF) - STMicroelectronics
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STP80PF55_02 Datasheet PDF : 6 Pages
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STP80PF55
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON (*)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 25 V
ID = 40 A
35
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
190
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 25 V ID = 80 A VGS= 10V
190
258
nC
27
nC
65
nC
SWITCHING OFF (*)
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 25 V
ID = 40 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
Vclamp = 40 V
ID = 80 A
RG = 4.7 Ω
VGS = 10 V
(Inductive Load, Figure 5)
Min.
Typ.
165
80
60
40
85
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE (*)
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 80 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*) Pulse width [ 300 µs, duty cycle 1.5 %.
(•) Pulse width limited by TJMAX
ISD = 80 A
di/dt = 100A/µs
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
110
495
9
Max.
80
320
1.3
Unit
A
A
V
ns
nC
A
3/6
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