G15N60HS 데이터 시트보기 (PDF) - Infineon Technologies
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G15N60HS Datasheet PDF : 11 Pages
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SGB15N60HS
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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJA
RthJA
Conditions
Max. Value
Unit
0.9
K/W
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
IC=400µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
600
3
-
-
-
-
Value
Typ.
-
2.8
3.5
4
-
-
-
10
Unit
max.
-V
3.15
4.00
5
µA
40
2000
100 nA
S
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
810
pF
Output capacitance
Coss
VGE=0V,
-
83
Reverse transfer capacitance
Crss
f=1MHz
-
51
Gate charge
QGate
VCC=480V, IC=15A
-
80
nC
VGE=15V
Internal emitter inductance
LE
-
7
nH
measured 5mm (0.197 in.) from case
Short circuit collector current2)
IC(SC)
VGE=15V,tSC≤10µs
-
135
A
VCC ≤ 400V,
Tj ≤ 150°C
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev 2.3 Oct 06
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