EG1 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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EG1 Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES
EG1Y(Z) --- EG1A(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISETIME= 7ns MAX.INPUTIMPEDANCE=1M . 22pF. JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
trr
+0.5A
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
EG1Y
1
EG1Z
EG1A
0.1
0.01
EG1
TJ=25
Pulse Width=300µS
0.001
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
1.5
1.2
EG 1Y
0.9
EG 1Z,EG 1
EG 1A
0.6
Single Phase
Half W ave 60Hz
Resistive or
Inductive Load
0.3
0
0
25
50
75
100 125 150
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
30
25
20
15
10
5
0
1
EG1Y
EG1Z,EG1
EG1A
5
10
50
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
2
EG1A
EG1Y-EG1
1
0.1 0.2 0.4 1 2 4 10 20 40 100
REVERSE VOLTAGE,VOLTS
Document Number 0262027
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
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