IRFP450 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRFP450 Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, One..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRFP450
N - CHANNEL 500V - 0.33Q - 14A - TO-247
PowerMESH™ MOSFET
TYPE
IRFP450
VDSS
500 V
RDS(on)
< 0.4 n
ID
14 A
. TYPICAL Ros(on)= 0.33 Q
. EXTREMELY HIGH dv/dt CAPABILITY
. 100% AVALANCHE TESTED
. VERY LOW INTRINSIC CAPACITANCES
. GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company's consolidated strip layout-based MESH
OVERLAY"1 process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
. HIGH CURRENT SWITCHING
. UNINTERRUPTIBLE POWER SUPPLY (UPS)
. DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (Ros = 20 kii)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 °C
ID Drain Current (continuous) at Tc = 100 °C
IDM(-) Drain Current (pulsed)
Plot Total Dissipation at Tc = 25 °C
Derating Factor
dv/dt(i) Peak Diode Recovery voltage slope
Tslg Storage Temperature
Jj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Unit
500
V
500
V
± 20
V
14
A
8.7
A
56
A
190
W
1.5
w/°c
3.5
V/ns
-65 to 150
°C
150
°C
(1) ISD <14 A, di/dt < 130 A^is. VDD < V(BR,OSS. Tj < TJMAX
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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