BAV170 데이터 시트보기 (PDF) - Diode Semiconductor Korea

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BAV170

Low-leakage double diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Low-leakage double diode

BAV170

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Typ

MAX UNIT Test Condition

Forward Voltage

VF

900

1000

mV

1100

1250

IF=1mA

IF=10mA

IF=50mA

IF=100mA

Reverse Leakage Current

IR

Junction Capacitance

Cj

Reverse Recovery Time

trr

5

VR=75V

nA

80

VR=75V,TJ=150℃

2.0

pF

VR=0V,f=1.0MHz

3

μs

IF=IR=10mA,Irr=0.1*IR

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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