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BAV170

Low-leakage double diode

Philips Electronics 

Philips Semiconductors

Low-leakage double diode

Product specification

BAV170

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

DESCRIPTION

Epitaxial, medium-speed switching,

double diode in a small SOT23 plastic

SMD package. The diodes are in

common cathode configuration.

PINNING

PIN

1

2

3

DESCRIPTION

anode

anode

common cathode

APPLICATION

• Low-leakage current applications in

surface mounted circuits.

MARKING

TYPE NUMBER

BAV170

MARKING

CODE(1)

JX*

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

handbook, 4 columns

2

1

3

Top view

2

1

3

MAM108

Fig.1 Simplified outline (SOT23) and symbol.

2003 Mar 25

2

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