BC846W(2006) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BC846W
(Rev.:2006)

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

BC846W ... BC849W

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VBEsat

–

700 mV

–

VBEsat

–

900 mV

–

VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

VBE 580 mV 660 mV 700 mV

VBE

–

–

720 mV

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

VCE = 30 V, Tj = 125°C, (E open)

ICB0

–

ICB0

–

–

15 nA

–

5 µA

Emitter-Base cutoff current

VEB = 5 V, (C open)

IEB0

–

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT 100 MHz

–

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

3.5 pF

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

–

9 pF

–

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

BC846W ... BC848W F

BC849W

F

–

2 dB

10 dB

–

1.2 dB

4 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 620 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC856W ... BC859W

Marking of available current gain

groups per type

Stempelung der lieferbare Stromverstärkungs-

gruppen pro Typ

BC846AW = 1A

BC847AW = 1E

BC848AW = 1J

BC846BW = 1B

BC847BW = 1F

BC848BW = 1K

BC849BW = 2B

BC847CW = 1G

BC848CW = 1L

BC849CW = 2C

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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