BC846W(2006) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BC846W
(Rev.:2006)

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

BC846W ... BC849W

BC846W ... BC849W

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Version 2006-06-27

Power dissipation – Verlustleistung

2±0.1

0.3

3

1±0.1

Type

Code

1

2

1.3

Dimensions - Maße [mm]

1=B 2=E 3=C

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

NPN

200 mW

SOT-323

0.01 g

Maximum ratings (TA = 25°C)

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open

Collector-Base-voltage – Kollektor-Basis-Spannung E open

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Peak Base current – Basis-Spitzenstrom

Peak Emitter current – Emitter-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Grenzwerte (TA = 25°C)

BC846W

BC847W

BC848W

BC849W

VCBO

65 V

45 V

30 V

VCEO

80 V

50 V

30 V

VEB0

6V

5V

Ptot

200 mW 1)

IC

100 mA

ICM

200 mA

IBM

200 mA

- IEM

200 mA

Tj

-55...+150°C

TS

-55…+150°C

Characteristics (Tj = 25°C)

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 5 V, IC = 10 µA

Group A

hFE

Group B

hFE

Group C

hFE

VCE = 5 V, IC = 2 mA

Group A

hFE

Group B

hFE

Group C

hFE

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

VCEsat

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

90

–

–

150

–

–

270

–

110

180

220

200

290

450

420

520

800

–

90 mV 250 mV

–

200 mV 600 mV

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

© Diotec Semiconductor AG

http://www.diotec.com/

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