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BD679

NPN SILICON POWER DARLINGTON TRANSISTOR

Central Semiconductor 

BD675 SERIES

NPN SILICON

POWER DARLINGTON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BD675 Series

types are NPN Silicon Darlington Power Transistors,

available in the plastic TO-126 package, and are

designed for audio and video output applications.

MARKING: FULL PART NUMBER

TO-126 CASE

BD675

MAXIMUM RATINGS: (TC=25°C) SYMBOL BD675A

Collector-Base Voltage

VCBO

45

Collector-Emitter Voltage

VCEO

45

Emitter-Base Voltage

VEBO

Continuous Collector Current

IC

Continuous Base Current

IB

Power Dissipation

PD

Operating and Storage

Junction Temperature

TJ, Tstg

Thermal Resistance

ΘJC

BD677

BD677A

60

60

BD679

BD679A

80

80

5.0

4.0

100

40

BD681

100

100

-65 to +150

3.13

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=Rated VCBO

ICBO

VCB=Rated VCBO, TC=100°C

ICEO

VCE=½Rated VCEO

IEBO

VEB=5.0V

BVCEO

IC=50mA (BD675, BD675A)

45

BVCEO

IC=50mA (BD677, BD677A)

60

BVCEO

IC=50mA (BD679, BD679A)

80

BVCEO

IC=50mA (BD681)

100

BVCEO

IC=50mA (BD683)

120

VCE(SAT)

IC=1.5A, IB=30mA (Non-A)

VCE(SAT)

IC=2.0A, IB=40mA (A)

VBE(ON)

VCE=3.0V, IC=1.5A (Non-A)

VBE(ON)

VCE=3.0V, IC=2.0A (A)

hFE

VCE=3.0V, IC=1.5A (Non-A)

750

hFE

VCE=3.0V, IC=2.0A (A)

750

hfe

VCE=3.0V, IC=1.5A, f=1.0MHz

1.0

MAX

200

2.0

500

2.0

2.5

2.8

2.5

2.5

BD683

120

120

UNITS

V

V

V

A

mA

W

°C

°C/W

UNITS

µA

mA

µA

mA

V

V

V

V

V

V

V

V

V

R1 (14-June 2010)

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