BC846C 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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BC846C Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
NPN general purpose Transistor
BC846/847/848
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=10mA,IB=B 0
V(BR)EBO IE=10μA,IC=0
VCB=70V,IE=0
ICBO
VCB=50V,IE=0
VCB=30V,IE=0
VCE=60V,IB=B 0
ICEO
VCE=45V,IB=B 0
VCE=30V,IB=B 0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
BC846A,847A,848A
BC846B,847B,848B hFE
BC846C,847C,848C
VCE=5V,IC=2mA
80
50
30
65
45
30
6
6
5
110
200
420
V
V
V
0.1 μA
0.1 μA
0.1 μA
220
450
800
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=B 5mA
0.5 V
Base-emitter saturation voltage
VBE(sat) IC=100mA, IB=B 5mA
1.1 V
Transition frequency
fT
VCE=5V, IC= 10mA 100
f=100MHz
MHz
Document number: BL/SSSTC043
Rev.A
www.galaxycn.com
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