2N6804 데이터 시트보기 (PDF) - TE Connectivity

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2N6804

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TE Connectivity 

MIL-PRF-19500/562C

4.5.4 Unclamped inductive switching.

a. Peak current (ID)..........................................................Rated ID1.

b. Peak gate voltage (VGS) ..............................................-10 V.

c. Gate to source resistor (RGS) ......................................25 Ω ≤ RGS ≤ 200 Ω.

d. Initial case temperature (TC)........................................+25°C +10°C, -5°C.

e. Inductance (L)..............................................................100 µH ±10 percent.

f. Number of pulses to be applied ....................................1 pulse minimum.

g. Pulse repetition rate .....................................................None.

4.5.5 Gate stress test.

VGS = ± 30 V minimum.

t = 250 µs minimum.

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