ACE4409BFM-H 데이터 시트보기 (PDF) - ACE Technology Co., LTD.

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ACE4409BFM-H

P-Channel Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

ACE4409B

P-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics

TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30

V

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

-1 uA

100 nA

Static Drain-Source On-Resistance RDS(ON)

VGS=-10V, ID=-15A

VGS=-4.5V, ID=-10A

8

11

mΩ

10

13

Gate Threshold Voltage

VGS(th) VDS=VGS, IDS=-250µA -1

-1.3

-2

V

Forward Transconductance

gFS

VGS=-5V, ID=-15A

50

S

Diode Forward Voltage

VSD

Maximum Body-Diode Continuous

Current

IS

ISD=-1A, VGS=0V

-0.71 -1

V

-2.7 A

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS=-15V, ID=-15A

VGS=-10V

Qgd

37.08 48.2

10.12 13.16 nC

11.24 14.61

Turn-On Delay Time

Td(on)

19.52 39.04

Turn-On Rise Time

Turn-Off Delay Time

tf

td(off)

VDS=-15V, RL=15Ω,

VGS=-10V, RGEN=6Ω

10.12 20.34

ns

137.6 275.2

Turn-Off Fall Time

tf

55.32 110.64

Dynamic

Input Capacitance

Ciss

3887.7

Output Capacitance

Coss

VDS=-15V, VGS=0V

f=1MHz

577.33

pF

Reverse Transfer Capacitance

Crss

42.72

Note: 1. The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

VER 1.2 2

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