E13009 데이터 시트보기 (PDF) - SavantIC Semiconductor

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E13009

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

MJE13009

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0

VCEsat-1

VCEsat-2

VCEsat-3

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Collector-emitter saturation voltage

IC=5A; IB=1A

IC=8A ;IB=1.6A

TC=100

IC=12A; IB=3A

VBEsat-1

VBEsat-2

ICEV

IEBO

hFE-1

Base-emitter saturation voltage

Base-emitter saturation voltage

Collector cut-off current

Emitter cut-off current

DC current gain

IC=5A; IB=1A

IC=8A; IB=1.6A

TC=100

VCEV=Rated value,

VBE(off)=1.5V dc;TC=100

VEB=9V; IC=0

IC=5A ; VCE=5V

hFE-2

DC current gain

IC=8A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=10V;f=1MHz

COB

Collector outoput capacitance

IE=0; f=0.1MHz ; VCB=10V

Switching times resistive load

td

Delay time

tr

Rise time

ts

Storage time

tf

Fall time

VCC=125V ,IC=8A

IB1=-IB2=1.6A

tp=25µs

duty cycleD1%

MIN TYP. MAX UNIT

400

V

1.0

V

1.5

2.0

V

3.0

V

1.2

V

1.6

1.5

V

1.0

5.0

mA

1.0 mA

8

40

6

30

4

MHz

180

pF

0.06 0.1 µs

0.45 1.0 µs

1.30 3.0 µs

0.20 0.7 µs

2

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