C4300 데이터 시트보기 (PDF) - Inchange Semiconductor
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C4300 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4300
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=2A;IB=0.4A
VBEsat Base-emitter saturation voltage
IC=2A;IB=0.4A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=2A ; VCE=4V
fT
Transition frequency
IE=-0.5A ; VCE=12V
COB
Output capacitance
VCB=10V;f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2A;IB1=0.3A;IB2=-1A;
RL=125Ω;VCC=250V
MIN TYP. MAX UNIT
800
V
0.5
V
1.2
V
100 μA
100 μA
10
30
6
MHz
75
pF
1
μs
5
μs
1
μs
2
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