2N5550 데이터 시트보기 (PDF) - Continental Device India Limited
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2N5550 Datasheet PDF : 4 Pages
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NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5550
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Base Voltage
VCEO* IC=1mA,IB=0
140
Collector Base Voltage
VCBO IC=100µA,IE=0
160
Emitter Base Voltage
VEBO IE=10µA, IC=0
6
Collector Cut off Current
ICBO VCB=100V, IE = 0
Ta=100OC
VCB =100V, IE=0
Emitter Cut off Current
IEBO
VBE=4V, IC = 0
DC Current Gain
hFE* VCE=5V,IC=1mA
60
VCE=5V,IC=10mA
60
VCE=5V,IC=50mA
20
Base Emitter Saturation Voltage
VBE(sat)* IC=10mA,IB=1mA
IC=50mA,IB= 5mA
Collector Emitter Saturation Voltage VCE(sat)* IC=10mA,IB=1mA
IC=50mA,IB=5mA
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
l hfe l IC=1mA, VCE=10V
50
f=1KHz
Transition Frequency
fT
IC=10mA, VCE=10V
f=100MHz
100
Output Capacitance
Cobo IE=0, VCB=10V
f=1MHz
Input Capacitance
Cibo Ic=0, VEB=0.5V
f=1MHz
Noise Figure
NF VCE =5V,IC=250µA
R=1Ω,f=10HZ to15.7kHz
*Pulse Condition: Width = 300µs, Duty Cycle= 2%.
TYP
MAX
100
100
50
250
1.0
1.2
0.15
0.25
200
300
6.0
30
10
UNITS
V
V
V
nA
µA
nA
µA
V
V
V
V
MHz
PF
PF
dB
Continental Device India Limited
Data Sheet
Page 2 of 4
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