BAS19W 데이터 시트보기 (PDF) - Yea Shin Technology Co., Ltd
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BAS19W Datasheet PDF : 2 Pages
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DATA SHEET
SEMICONDUCTOR
SOT-323 Plastic-Encapsulate DIODE
SWITCHING DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IF: 200 mA
Collector-base voltage
VR: 19W: 120 V; 20W: 150V ; 21W: 200V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
BAS19W/20W/21W
H
SOT323 Unit:inch(mm)
H•igh temperature soldering : 260OC / 10 seconds at terminals
P•b free product at available : 99% Sn above meet RoHS
environment substance directive request
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Parameter
Symbol
Test conditions
MIN
BAS19W V(BR) R
IR= 100µA
100
Reverse breakdown voltage
BAS20W
150
BAS21W
200
BAS19W
IR
100V
Reverse voltage leakage current BAS20W
VR=150V
BAS21W
200V
Forward voltage
VF
IF=100mA
IF=200mA
Diode capacitance
CD
VR=0V, f=1MHz
Reveres recovery time
trr
IF=IR=30mA
Irr=0.1×IR
MAX
0.1
1000
1250
5
50
UNIT
V
µA
mV
pF
nS
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1
REV.02 20120305
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