MUR20040CT 데이터 시트보기 (PDF) - GeneSiC Semiconductor, Inc.
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MUR20040CT Datasheet PDF : 3 Pages
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Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 to 600 V VRRM
• Not ESD Sensitive
MUR20040CT thru MUR20060CTR
VRRM = 400 V - 600 V
IF(AV) = 200 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR20040CT (R)
MUR20060CT (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
400
280
400
-55 to 150
-55 to 150
600
420
600
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MUR20040CT (R)
MUR20060CT (R)
Average forward current (per pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at rated
DC blocking voltage (per leg)
Maximum reverse recovery time
(per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
IF(AV)
TC = 140 °C
IFSM tp = 8.3 ms, half sine
VF IFM = 100 A, Tj = 25 °C
IR
Tj = 25 °C
Tj = 125 °C
Trr
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
RΘJC
200
2000
1.3
25
3
90
0.45
200
2000
1.7
25
3
110
0.45
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
mA
nS
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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