NTE247 데이터 시트보기 (PDF) - NTE Electronics

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NTE247

Silicon Complementary Transistors Darlington Power Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

VBE(on)

VCE = 3V, IC = 6A

VCE = 3V, IC = 12A

IC = 6A, IB = 24mA

IC = 12A, IB = 120mA

IC = 12A, IB = 120mA

VCE = 3V, IC = 6A

750 – 18000

100 –

–

– – 2.0 V

– – 3.0 V

– – 4.0 V

– – 2.8 V

Small–Signal Current Gain

hfe VCE = 3V, IC = 5A, f = 1kHz

Magnitude of Common Emitter

Small–Signal Short–Circuit

|hfe| VCE = 3V, IC = 5A, f = 1MHz

Forward Current Transfer Ratio

300 –

4.0 –

–

– MHz

Output Capacitance

NTE247

NTE248

Cob

VCB = 10V, IE = 0, f = 0.1MHz

pF

– – 300

– – 500 pF

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%

NTE247

C

.135 (3.45) Max

B

.350 (8.89)

.875 (22.2)

Dia Max

Seating

Plane

E

.312 (7.93) Min

.040 (1.02)

NTE248

Emitter

.215 (5.45)

1.187 (30.16)

.665

(16.9)

C

B

.430

(10.92)

.188 (4.8) R Max

.525 (13.35) R Max

E

Base

Collector/Case

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