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EGP10A 데이터 시트보기 (PDF) - General Semiconductor

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EGP10A
General
General Semiconductor General
EGP10A Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTICS CURVES EGP10A THRU EGP10G
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
1.0
RESISTIVE OR
INDUCTIVE LOAD
0.375” (9.5mm)
LEAD LENGTH
0.5
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
TJ=TJ max.
8.3ms SINGLE HALF SINE WAVE
25
(JEDEC Method)
20
15
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, °C
FIG. 3 -TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
10
5.0
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
1,000
10
PULSE WIDTH=300µs
1% DUTY CYCLE
TJ=150°C
1
TJ=25°C
100
10
1
TJ=150°C
TJ=100°C
0.1
0.01
0.2 0.4 0.6 0.8
EGP10A - EGP10D
EGP10F & EGP10G
1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
70
TJ=25°C
60
f=1.0 MHZ
Vsig=50mVp-p
50
40
30
20
10
EGP10A - EGP10D
EGP10F & EGP10G
0
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
0.1
TJ=25°C
0
0
20
40
60
80 100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec.

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