YENYO
SS12 THRU SS110
1.0A Schottky Barrier Rectifiers
1. 封裝 Package
封裝方式 Method: SMAF
封裝尺寸 Dimension: 如圖示
2. 產品特色 Features
For surface mounted applications
Ultra thin profile package for space constrained utilization
Package suitable for automated handling
Metal to silicon rectifier, majority carrier conduction.
Low power loss, high efficiency.
High surge capacity
High current capacity, low VF
Meet with EU RoHS 2011/65/EU compliance
Lead free and Green device
3. 機械數據 Mechanical Data
Epoxy: UL94V‐0 rated flame retardant
Case: Epoxy, Molded
Terminals: Solder plated solderable per MIL‐STD‐750 Method 2026
Polarity: Color band denotes cathode end
單位 Unit: millimeters
4. 極限值與電參數 Maximum Ratings & Electrical Characteristic
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
PARAMETER
Recurrent Peak Reverse Voltage
RMS voltage
Maximum DC blocking voltage
Peak Forward Surge Current 8.3ms single half sine ‐wave
superimposed on rated load (JEDEC Method)
Average Forward Current
Operating Junction Temperature and Storage Temperature Range
Typical thermal resistance, Junction to Ambient (NOTE1)
Junction to Lead (NOTE2)
Forward Voltage at 1.0A
DC reverse current at rated
DC blocking voltage
TJ=25℃
Symbol
VRRM
VRMS
VR
IFSM
IF(AV)
TJ,TSTG
R0JA
RÈJL
VF
IR
SS12
20
14
20
SS14
40
28
40
SS16
60
42
60
SS110
100
70
100
UNITS
Volts
Volts
Volts
30
1.0
‐55 to +150
150
18
‐65 to +175
150
19
0.5
0.7
0.8
Amps
Amps
OC
OC/W
Volts
0.2
0.1
0.05
mA
Notes :
(1) Mounted on an FR4 PCB, single‐sided copper, mini pad
(2) Mounted on an FR4 PCB, single‐sided copper, with 48cm2 copper pad area
1/3
R1,MAY-15