DCR1474SY 데이터 시트보기 (PDF) - Dynex Semiconductor

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DCR1474SY

Phase Control Thyristor

Dynex Semiconductor 

DCR1474SY

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

I /I

RRM DRM

dV/dt

dI/dt

VT(TO)

r

T

tgd

tq

IL

IH

Peak reverse and off-state current

At V /V , T = 125oC

-

RRM DRM case

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.

-

Rate of rise of on-state current

From 67% VDRM to 1000A Repetitive 50Hz -

Gate source 20V, 10Ω

tr ≤ 0.5µs to 1A, Tj = 125oC Non-repetitive

-

Threshold voltage

At Tvj = 125oC

-

On-state slope resistance

Delay time

Turn-off time

At T = 125oC

-

vj

VD = 67% VDRM, Gate source 30V, 15Ω

tr ≤ 0.5µs, Tj = 25oC

-

I = 1000A, t = 1ms, T = 125˚C,

T

p

j

VR = 50V, dIRR/dt = 2A/µs,

200

V

DR

=

67%

V,

DRM

dV /dt

DR

=

8V/µs

linear

Latching current

Tj = 25oC, VD = 5V

300

Holding current

Tj = 25oC, Rg-k = ∞

-

250 mA

1000 V/µs

150 A/µs

300 A/µs

0.92 V

0.09 mΩ

2.5

µs

-

µs

1000 mA

500 mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Conditions

VGT

IGT

V

GD

VFGM

VFGN

V

RGM

IFGM

PGM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At V T = 125oC

DRM case

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, gate characteristics curve

Max. Units

4.0

V

400 mA

0.25 V

30

V

0.25 V

5

V

30

A

150 W

10

W

4/8

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