2N6546 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2N6546 Datasheet PDF : 4 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6546
2N6547
IC=100mA ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A
VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A
VBEsat
ICEV
IEBO
Base-emitter saturation voltage
IC=10A ;IB=2A
Collector cut-off current
2N6546
2N6547
VCE=650V; VBE(off)=1.5V
TC=100℃
VCE=850V ;VBE(off)=1.5V
TC=100℃
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=2V
hFE-2
DC current gain
fT
Transition frequency
Switching times
IC=10A ; VCE=2V
IC=0.5A ; VCE=10V;f=1MHz
td
Delay time
tr
Rise time
tstg
Storage time
IC=10A; IB1=-IB2=2.0A
VCC=250V; tp=0.1ms;
Duty Cycle≤2.0%
tf
Fall time
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
Product Specification
2N6546 2N6547
MIN TYP. MAX UNIT
300
V
400
1.5
V
5.0
V
1.6
V
1.0
4.0
mA
1.0
4.0
mA
1.0
mA
12
60
6
30
6
35 MHz
0.05 μs
1.0
μs
4.0
μs
0.8
μs
MAX
1.0
UNIT
℃/W
2
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