IRF420 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
일치하는 목록
IRF420
New Jersey Semiconductor
IRF420 Datasheet PDF : 3 Pages
| |||
IRF420, IRF421, IRF422, IRF423
Electrical Specifications Tc = 25°C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
ClSS
CQSS
CRSS
LD
VDS = 25V, VGS = OV, f = 1MHz, (Figure 1 1 )
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die.
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances.
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.
MIN TYP MAX UNITS
-
300
-
PF
-
75
-
PF
-
20
-
PF
5.0
nH
12.5
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Rejc
RejA
Free Air Operation
Source to Drain Diode Specifications
-
^-
-
2.5 °C/W
-
30 °C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
!SD
'SDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
D
.JJE
-
-
2.5
A
10
A
Source to Drain Diode Voltage (Note 2)
1s
VSD
^ Tj = 25°C, ISD = 2.5A, VGS = OV, (Figure 13)
-
-
1.4
V
Reverse Recovery Time
trr
Tj = 25°C, ISD = 2.5A, dlso/dt = 100A/us
130 270 540
ns
Reverse Recovered Charge
QRR
Tj = 25°C, ISD = 2.5A, dlso/dt = 100A/US
0.57 1.2 2.3
uC
NOTES:
2. Pulse test: pulse width < 300ns, duty cycle < 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting Tj = 25°C, L = 60mH, RG = 25n, peak IAS = 2.5A, Figures 15,16.
Share Link: