UT62256CE 데이터 시트보기 (PDF) - Utron Technology Inc

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UT62256CE

32K X 8 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.0

UTRON

WRITE CYCLE 1 ( WE Controlled) (1,2,3,5)

UT62256C(E)

32K X 8 BIT LOW POWER CMOS SRAM

tWC

Address

tAW

CE

tCW

tAS

tWP

tWR

WE

DOUT

tWHZ

High-Z

tOW

(4)

(4)

tDW

tDH

DIN

Data Valid

WRITE CYCLE 2 ( CE Controlled) (1,2,5)

tWC

Address

tAW

CE

tAS

tCW

tWR

tWP

WE

DOUT

tWHZ

(4)

High-Z

tDW

tDH

DIN

Data Valid

Notes :

1. WE or CE must be HIGH during all address transitions.

2. A write occurs during the overlap of a low CE and a low WE .

3. During a WE controlled with write cycle with OE LOW, tWP must be greater than tWHZ+tDW to allow the drivers to turn off

and data to be placed on the bus.

4. During this period, I/O pins are in the output state, and input signals must not be applied.

5. If the CE LOW transition occurs simultaneously with or after WE LOW transition, the outputs remain in a high impedance

state.

6. tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

5

P80071

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