GP401DDM18 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP401DDM18 Datasheet PDF : 7 Pages
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GP401DDM18
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
t
d(on)
tr
EON
Qrr
I
rr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I = 400A
C
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 100nH
IF = 400A, VR = 50% VCES,
dIF/dt = 3000A/µs
Min. Typ. Max. Units
-
900 1100 ns
-
330 400 ns
-
180 250 mJ
-
500 650 ns
-
200 400 ns
-
200 230 mJ
-
80
100 µC
-
250
-
A
-
70
-
mJ
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 100nH
IF = 400A, VR = 50% VCES,
dIF/dt = 2500A/µs
Min. Typ. Max. Units
-
1010 1200 ns
-
450 500 ns
-
250 320 mJ
-
600 800 ns
-
310 400 ns
-
200 270 mJ
-
110 150 µC
-
300
-
A
-
190
-
mJ
4/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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