P4C164LL 데이터 시트보기 (PDF) - Semiconductor Corporation

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P4C164LL

VERY LOW POWER 8K x 8 STATIC CMOS RAM

Semiconductor Corporation 

P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM

DATA RETENTION CHARACTERISTICS

Symbol

Parameter

Test Condition

Min Typ. * VCC =

Max VCC =

Unit

2.0V 3.0V 2.0V 3.0V

VDR VCC for Data Retention

2.0

V

ICCDR Data Retention Current

CE1 ≥ VCC - 0.2V or

1

2

3

4

µA

tCDR Chip Deselect to Data Retention Time CE2 ≤ 0.2V, VIN ≥ VCC - 0.2V or 0

ns

tR† Operation Recovery Time

VIN ≤ 0.2V

tRC§

ns

* TA = +25°C

§tRC = Read Cycle Time

† This parameter is guaranteed but not tested.

DATA RETENTION WAVEFORM

ORDERING INFORMATION

Document # SRAM116 REV 04

Page 7

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