C3505 데이터 시트보기 (PDF) - SavantIC Semiconductor

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C3505

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3505

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A

VBEsat

Base-emitter saturation voltage

IC=2A ;IB=0.4A

ICBO

Collector cut-off current

VCB=900V; IE=0

IEBO

Emitter cut-off current

VEB=10V; IC=0

hFE

DC current gain

IC=2A ; VCE=5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=3A;IB1=0.6A;IB2=-1.2A

RL=100D,PW=20µs

DutyE2%

MIN TYP. MAX UNIT

700

V

900

V

0.5

V

1.2

V

1.0

mA

1.0

mA

10

1.0

µs

5.0

µs

1.0

µs

2

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