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AUIRF2805

HEXFET® Power MOSFET

International Rectifier 

AUIRF2805

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

55 ––– ––– V VGS = 0V, ID = 250μA

f V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance ––– 3.9 4.7 m VGS = 10V, ID = 104A

VGS(th)

Gate Threshold Voltage

2.0 ––– 4.0 V VDS = VGS, ID = 250μA

gfs

Forward Transconductance

91 ––– ––– S VDS = 25V, ID = 104A

IDSS

Drain-to-Source Leakage Current

––– ––– 20 μA VDS = 55V, VGS = 0V

––– ––– 250

VDS = 55V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Qg

Total Gate Charge

––– 150 230

ID = 104A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

––– 38

––– 52

57

78

f nC VDS = 44V

VGS = 10V

td(on)

Turn-On Delay Time

––– 14 –––

VDD = 28V

tr

Rise Time

––– 120 –––

ID = 104A

td(off)

tf

Turn-Off Delay Time

Fall Time

––– 68 –––

––– 110 –––

f ns RG = 2.5 

VGS = 10V

LD

Internal Drain Inductance

––– 4.5 –––

Between lead,

D

LS

Internal Source Inductance

nH 6mm (0.25in.)

––– 7.5 –––

from package

G

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Coss

Coss eff.

g Output Capacitance

Effective Output Capacitance

Diode Characteristics

––– 5110 –––

––– 1190 –––

––– 210 –––

––– 6470 –––

––– 860 –––

––– 1600 –––

and center of die contact

S

VGS = 0V

pF VDS = 25V

ƒ = 1.0MHz, See Fig. 5

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 44V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 44V

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

––– ––– 175

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

A showing the

––– ––– 700

integral reverse

G

––– ––– 1.3

f p-n junction diode.

S

V TJ = 25°C, IS = 104A, VGS = 0V

–––

–––

80 120

290 430

f ns TJ = 25°C, IF = 104A

nC di/dt = 100A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

‚ Starting TJ = 25°C, L = 0.08mH

RG = 25, IAS = 104A. (See Figure 12).

ƒ ISD  104A, di/dt  240A/μs, VDD V(BR)DSS,

TJ  175°C

„ Pulse width  400μs; duty cycle  2%.

… Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

‡ This value determined from sample failure population, starting

TJ = 25°C, L = 0.08mH, RG = 25, IAS = 104A.

ˆ Ris measured at TJ of approximately 90°C.

2

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