IRG4PH50SPBF 데이터 시트보기 (PDF) - International Rectifier
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IRG4PH50SPBF Datasheet PDF : 8 Pages
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PD -95525A
IRG4PH50SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
C
G
E
n-channel
Standard Speed IGBT
VCES =1200V
VCE(on) typ. = 1.47V
@VGE = 15V, IC = 33A
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
c Pulsed Collector Current
d Clamped Inductive Load Current
Gate-to-Emitter Voltage
e Transient Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
1200
57
33
114
114
± 20
± 30
270
200
80
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
mJ
W
°C
Min.
—
—
—
—
Typ.
—
0.24
—
6.0(0.21)
Max.
0.64
—
40
—
Units
°C/W
g (oz)
1
07/08/08
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