R5509-42 데이터 시트보기 (PDF) - Hamamatsu Photonics
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R5509-42 Datasheet PDF : 12 Pages
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APPLICATION EXAMPLES
Photoluminescence measurement
Sample 2
Undoped SI-InP
Emission from deep levels in a semi-
insulating InP substrate at room tem-
perature was clearly observed.
SAMPLE TEMPERATURE
300K
( ) room
temperature
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 300K
X10
EXCITATION LIGHT
POWER: 0.6 mW
X1
Data shows that intensity distribution
of the photoluminescence spectrum
changes with excitation light power.
Using a "low power excitation light" al-
lows high-precision measurement not
subject to variations in excitation light
intensity. It is therefore essential to
use "low power excitation light" in or-
der to measure emission from deep
levels and total band-to-band transi-
tion.
Data was measured with a near infrared
measurement system described later.
Sample 3
Undoped SI-GaAs
Emission from deep levels in a semi-
insulating GaAs substrate at room
temperatures was clearly observed.
SAMPLE TEMPERATURE
77K
EXCITATION LIGHT
X1
POWER: 3 mW
X10
700 800 900 1000 1100 1200 1300 1400 1500 1600 1700
WAVELENGTH (nm)
TPMHB0621EA
EXCITATION LIGHT
: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 77K
EXCITATION LIGHT
POWER: 0.05 mW
EXCITATION LIGHT
POWER: 0.6 mW
EXCITATION LIGHT
POWER: 3 mW
800 900 1000 1100 1200 1300 1400 1500 1600
WAVELENGTH (nm)
TPMHB0622EA
SAMPLE TEMPERATURE
300K
( ) room
temperature
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 300K
EXCITATION LIGHT
POWER: 0.6 mW
SAMPLE TEMPERATURE
77K
EXCITATION LIGHT
POWER: 3 mW
700 800 900 1000 1100 1200 1300 1400 1500 1600 1700
WAVELENGTH (nm)
TPMHB0619EA
EXCITATION LIGHT: SHG Nd: YAG (532 nm)
SLIT: 0.5 × 0.5 mm
SAMPLE TEMPERATURE: 77K
Data was measured with a near infrared
measurement system described later.
EXCITATION LIGHT
POWER: 2 nW
700 800 900 1000 1100 1200 1300 1400 1500 1600 1700
WAVELENGTH (nm)
TPMHB0620EA
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