F10GZ47 데이터 시트보기 (PDF) - Toshiba
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F10GZ47 Datasheet PDF : 6 Pages
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SF10GZ47,SF10JZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non−Trigger Voltage
Critical Rate of Rise of Off−State Voltage
Holding Current
Latching current
Thermal Resistance
SYMBOL
TEST CONDITION
IDRM
IRRM
VTM
VGT
IGT
VGD
dv / dt
IH
IL
Rth (j−c)
VDRM = VRRM = Rated
ITM = 30A
VD = 6V, RL = 10Ω
VD = Rated × 2 / 3, Tc = 125°C
VDRM = Rated, Tc = 125°C
Exponential Rise
VD = 6V, ITM = 1A
VD = 6V, f = 50Hz, tgw = 50µs
iG = 30mA
Junction to Case
MIN TYP. MAX UNIT
―
―
10
µA
―
―
1.5
V
―
―
1.0
V
―
―
10
mA
0.2
―
―
V
―
50
― V / µs
―
―
40
mA
―
―
50
mA
―
―
3.4 °C / W
MARKING
*1
MARK
F10GZ47
F10JZ47
TYPE
NAME
SF10GZ47
SF10JZ47
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-13
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