DG509A 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG509A Datasheet PDF : 11 Pages
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DG508A_MIL/509A_MIL
Vishay Siliconix
SPECIFICATIONSa
Parameter
Power Supplies
Positive Supply Current
Negative Supply Current
Symbol
I+
I–
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 Vf
VEN = 0 V or 2.4 V
Tempb
A Suffix
–55 to 125_C
Mind
Typc
Maxd Unit
Room
Room
–1.5
1.3
2.4
mA
–0.7
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply
"5 V
500
400
"7.5 V
300
"10 V
"15 V
200
"20 V
100
0
–20 –15 –10 –5 0 5 10 15 20
VD – Drain Voltage (V)
Charge Injection vs. Analog Voltage (VS)
16
V+ = 15 V
14 V– = –15 V
12
10
8
6
4
2
0
–15
–10
–5
0
5
10
15
VS – Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
5-4
Input Switching Threshold vs. V+ and V–
Supply Voltages
2.5
2.0
1.5
1.0
0.5
0
”5
”10
”15
”20
V+, V– Positive and Negative Supplies (V)
rDS(on) vs. VD and Temperature
500
V+ = 15 V
450 V– = –15 V
400
350
300
125_C
250
25_C
200
150
–55_C
100
50
0
–15 –10
–5
0
5
10
15
VD – Drain Voltage (V)
Document Number: 70067
S-00405—Rev. C, 21-Feb-00
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