BYT12P600A 데이터 시트보기 (PDF) - Vishay Semiconductors

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BYT12P600A

Fast Recovery Silicon Power Rectifier

Vishay Semiconductors 

BYT12P/600A/800A

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter

Forward voltage

Reverse current

Forward recovery time

Turn on transient peak

voltage

Reverse recovery

characteristics

Reverse recovery time

Test Conditions

IF=12A

IF=12A, Tj=100°C

VR=VRRM

x VR=VRRM, Tj=100°C

IF=12A, diF/dt 50A/ms

x IF=12A, diF/dt –50A/ms,

x VBatt=200V, Tj=100°C

IF=12A, diF/dt –50A/ms,

VBatt=200V, Tj=100°C,

iR=0.25xIRM

IF=0.5A, IR=1A, iR=0.25A

Type Symbol Min Typ Max Unit

VF

1.9 V

VF

1.8 V

IR

50 mA

IR

2.5 mA

tfr

350

ns

VFP

4.5 V

IRM

6A

tIRM

160 ns

trr

180

ns

trr

50 ns

Characteristics (Tj = 25_C unless otherwise specified)

1000

16

100

10

VR=VRRM

1

0.1

0

94 9374

40

80

120 160 200

Tj – Junction Temperature ( °C )

Figure 1. Typ. Reverse Current vs. Junction Temperature

12

RthJA=5K/W RthJC=2K/W

8

10K/W

4

85K/W

0

0

40

80

120 160 200

94 9095

Tamb – Ambient Temperature ( °C )

Figure 2. Max. Average Forward Current vs.

Ambient Temperature

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2 (5)

Document Number 86022

Rev. 2, 24-Jun-98

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