BYT08 데이터 시트보기 (PDF) - STMicroelectronics
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BYT08 Datasheet PDF : 7 Pages
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BYT08P-400 / BYT08PI-400
Fig. 11: Forward recovery time versus dIF/dt (per
diode)
Fig. 12: Dynamic parameters versus junction
temperature.
tfr(µs)
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
100
dIF/dt(A/µs)
200
300
IF=IF(av)
90% confidence
Tj=100°C
400
500
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
1.50
1.25
1.00
0.75
IRM
0.50
0.25
0
Qrr
Tj(°C)
25
50
75
100 125 150
Fig. 13: Turn-off switching characteristics (without series inductance).
Fig. 14: Turn-off switching characteristics (with series inductance).
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