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K12A50D

Silicon N Channel MOS Type (π-MOSⅦ) Field Effect Transistor

Toshiba 

TK12A50D

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Switching time

Turn-on time

Fall time

Turn-off time

Total gate charge

Gate-source charge

Gate-drain charge

Symbol

Test Condition

Min Typ. Max Unit

IGSS

VGS = ±30 V, VDS = 0 V

⎯

⎯

±1

μA

IDSS

VDS = 500 V, VGS = 0 V

⎯

⎯

10

μA

V (BR) DSS ID = 10 mA, VGS = 0 V

500 ⎯

⎯

V

Vth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

V

RDS (ON) VGS = 10 V, ID = 6 A

⎯ 0.45 0.52 Ω

⎪Yfs⎪

VDS = 10 V, ID = 6 A

1.5 6.0

⎯

S

Ciss

⎯ 1350 ⎯

Crss

VDS = 25 V, VGS = 0 V, f = 1 MHz

⎯

6

⎯

pF

Coss

⎯ 135 ⎯

tr

10 V

VGS

ID = 6 A VOUT

⎯

22

⎯

0V

ton

50 Ω

RL = 33 Ω ⎯

55

⎯

ns

tf

⎯

15

⎯

VDD ≈ 200 V

toff

Duty ≤ 1%, tw = 10 μs

⎯ 100 ⎯

Qg

Qgs

VDD ≈ 400 V, VGS = 10 V, ID = 12 A

Qgd

⎯

25

⎯

⎯

16

⎯

nC

⎯

9

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

⎯

⎯

IDR = 12 A, VGS = 0 V

IDR = 12 A, VGS = 0 V,

dIDR/dt = 100 A/μs

Min Typ. Max Unit

⎯

⎯

12

A

⎯

⎯

48

A

⎯

⎯

−1.7

V

⎯ 1300 ⎯

ns

⎯

12

⎯

μC

Marking

K12A50D

Part No. (or abbreviation code)

Lot No.

A line indicates

Lead(Pb)-Fee Finish.

2

2008-09-10

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