A1452 데이터 시트보기 (PDF) - Toshiba

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A1452

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Toshiba 

VBE (sat) – IC

−5

Common emitter

−3

IC/IB = 20

−1

−0.5

−0.3

Tc = −55°C

100

25

−0.1

−0.1

−0.3

−1

−3

Collector current IC (A)

−10 −20

2SA1452A

IC – VBE

−10

Common emitter

VCE = −1 V

−8

−6

Tc = 100°C

−4

25

−55

−2

0

0

−0.4 −0.8 −1.2 −1.6 −2.0 −2.4

Base-emitter voltage VBE (V)

rth – tw

100

Curves should be applied in thermal limited area.

(single nonrepetitive pulse)

30

(1) Infinite heat sink

(2) No heat sink

10

3

1

0.3

0.1

0.001

0.01

0.1

1

10

Pulse width tw (s)

(2)

(1)

100

1000

Safe Operating Area

−30

IC max (pulsed)*

−10

IC max

−5 (continuous)

−3

DC operation

Tc = 25°C

1 ms*

10 ms*

−1

−0.5

−0.3 *: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated linearly with

increase in temperature.

VCEO

max

−0.1

−1

−3

−10

−30

−100

Collector-emitter voltage VCE (V)

50

40

(1)

30

PC – Ta

(1) Tc = Ta

Infinite heat sink

(2) No heat sink

20

10

(2)

0

0

40

80

120

160

200

240

Ambient temperature Ta (°C)

4

2006-11-09

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