MRF1508 데이터 시트보기 (PDF) - Motorola => Freescale
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MRF1508 Datasheet PDF : 16 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1508/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1508 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
D
Power Gain — 14 dB
Efficiency — 60%
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
G
• RF Power Plastic Surface Mount Package
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
S
• Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1508
(Cancelled)
MRF1508T1
8 W, 520 MHz, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD 1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1)
Calculated
based
on
the
formula
PD
=
TJ – TC
RθJC
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
40
± 20
4
62.5
0.50
– 65 to +150
150
Max
2
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
© MMoOtorToOla,RInOc.L1A99R8 F DEVICE DATA
MRF1508
1
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